QH8K22TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Power - Max :

1.1W Ta

Drain-source On Resistance-Max :

0.046Ohm

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 20V

DS Breakdown Voltage-Min :

40V

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Packaging :

Cut Tape (CT)

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

2.6nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

8-SMD, Flat Lead

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

2

Avalanche Energy Rating (Eas) :

1.6 mJ

Pulsed Drain Current-Max (IDM) :

18A

Vgs(th) (Max) @ Id :

2.5V @ 10μA

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F8

Operating Temperature :

150°C TJ

FET Feature :

Standard

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

46m Ω @ 6.5A, 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99