QH8K26TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.038Ohm

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 20V

Reach Compliance Code :

not_compliant

Operating Temperature :

150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Power - Max :

1.1W Ta

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 5V

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

18A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

38m Ω @ 7A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

FET Feature :

Standard

Package / Case :

8-SMD, Flat Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

2 N-Channel (Dual)

Packaging :

Cut Tape (CT)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

1 mJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F8