QH8KA1TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.073Ohm

Power - Max :

2.4W

Packaging :

Cut Tape (CT)

Number of Terminations :

8

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Avalanche Energy Rating (Eas) :

0.65 mJ

Current - Continuous Drain (Id) @ 25°C :

4.5A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

12A

Rds On (Max) @ Id, Vgs :

73m Ω @ 4.5A, 10V

Published :

2015

FET Type :

2 N-Channel (Dual)

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-SMD, Flat Lead

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Reach Compliance Code :

not_compliant

Number of Elements :

2

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F8

Mounting Type :

Surface Mount

Factory Lead Time :

20 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)