QH8K51TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Number of Elements :

2

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.355Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

6A

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Rds On (Max) @ Id, Vgs :

325m Ω @ 2A, 10V

Drain Current-Max (Abs) (ID) :

2A

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 5V

Transistor Application :

SWITCHING

Surface Mount :

yes

Mounting Type :

Surface Mount

FET Feature :

Standard

Package / Case :

8-SMD, Flat Lead

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Cut Tape (CT)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Power - Max :

1.1W Ta

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F8