PSMN9R5-100PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation :

211W

Package / Case :

TO-220-3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0096Ohm

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4454pF @ 50V

Case Connection :

DRAIN

JESD-609 Code :

e3

Packaging :

Tube

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

100V

FET Type :

N-Channel

Number of Terminations :

3

Pin Count :

3

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

89A Tc

Turn-Off Delay Time :

52.2 ns

Terminal Finish :

Tin (Sn)

Rise Time :

25.2ns

Continuous Drain Current (ID) :

89A

Fall Time (Typ) :

22.8 ns

Published :

2013

Power Dissipation-Max :

211W Tc

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Surface Mount :

No

Turn On Delay Time :

22 ns