PSMN8R7-80PS,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

90A

FET Type :

N-Channel

Case Connection :

DRAIN

Pin Count :

3

Power Dissipation-Max :

170W Tc

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

80V

Element Configuration :

Single

Turn-Off Delay Time :

46 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

3346pF @ 40V

Mounting Type :

Through Hole

Max Dual Supply Voltage :

80V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 10A, 10V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0087Ohm

Power Dissipation :

170W

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

90A Tc

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Factory Lead Time :

12 Weeks

Surface Mount :

No

Rise Time :

26ns

Transistor Application :

SWITCHING

Turn On Delay Time :

21 ns

JESD-609 Code :

e3

Fall Time (Typ) :

20 ns

Number of Elements :

1

Published :

2010