PSMN8R5-60YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

97 mJ

Vgs (Max) :

±20V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

8m Ω @ 15A, 10V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

76A

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

303A

Height :

6.35mm

Max Dual Supply Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Terminal Form :

Gull wing

Number of Pins :

4

Published :

2014

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Turn-Off Delay Time :

32.4 ns

Power Dissipation-Max :

106W Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

106W

Pin Count :

4

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.008Ohm

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

4

Fall Time (Typ) :

9.2 ns

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 30V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Package / Case :

SC-100, SOT-669

Radiation Hardening :

No

JEDEC-95 Code :

MO-235

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Rise Time :

13.7ns

Width :

6.35mm

Length :

6.35mm

Weight :

4.535924g

Turn On Delay Time :

18.4 ns