PSMN8R5-108ES

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

219 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

108V

Pin Count :

3

Terminal Position :

Single

Power Dissipation-Max :

263W Tc

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0085Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 25A, 10V

Number of Terminations :

3

Case Connection :

DRAIN

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

100A Tj

Gate Charge (Qg) (Max) @ Vgs :

111nC @ 10V

Drain Current-Max (Abs) (ID) :

100A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

108V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

429A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5512pF @ 50V

Reference Standard :

IEC-60134

Published :

2014