PSMN8R5-100PSQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

100V

Number of Terminations :

3

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

No

Package / Case :

TO-220-3

Pin Count :

3

Published :

2013

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

100A Tj

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5512pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

35ns

Pulsed Drain Current-Max (IDM) :

429A

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

111nC @ 10V

Power Dissipation :

263W

Power Dissipation-Max :

263W Tc

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

87 ns

Lead Free :

Lead Free

Number of Pins :

3

Drain-source On Resistance-Max :

0.0085Ohm

Terminal Position :

Single

Fall Time (Typ) :

43 ns

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

Continuous Drain Current (ID) :

100A

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 25A, 10V

Transistor Application :

SWITCHING