PSMN8R3-40YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

6 ns

Height :

6.35mm

Avalanche Energy Rating (Eas) :

33 mJ

Power Dissipation-Max :

74W Tc

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

8.6m Ω @ 15A, 10V

Weight :

4.535924g

Package / Case :

SC-100, SOT-669

Rise Time :

11ns

Lead Free :

Lead Free

JESD-609 Code :

e3

Pin Count :

4

Continuous Drain Current (ID) :

70A

Transistor Element Material :

SILICON

Packaging :

Digi-Reel®

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1215pF @ 20V

Operating Temperature :

-55°C~175°C TJ

Max Dual Supply Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Power Dissipation :

74W

Number of Pins :

4

Length :

6.35mm

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Terminal Form :

Gull wing

Width :

6.35mm

Number of Elements :

1

Turn-Off Delay Time :

21 ns

Drain-source On Resistance-Max :

0.0086Ohm

Terminal Position :

Single

Turn On Delay Time :

13 ns

JEDEC-95 Code :

MO-235

Radiation Hardening :

No