PSMN8R040PS127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Published :

2009

DS Breakdown Voltage-Min :

40V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Surface Mount :

No

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Power Dissipation-Max :

86W Tc

Drain to Source Voltage (Vdss) :

40V

Drain Current-Max (Abs) (ID) :

77A

Rds On (Max) @ Id, Vgs :

7.6m Ω @ 25A, 10V

Packaging :

Tube

Number of Pins :

3

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Drain-source On Resistance-Max :

0.0076Ohm

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1262pF @ 12V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Vgs (Max) :

±20V