PSMN8R0-80YLX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G4

Input Capacitance (Ciss) (Max) @ Vds :

8167pF @ 25V

Factory Lead Time :

12 Weeks

DS Breakdown Voltage-Min :

80V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

FET Type :

N-Channel

Surface Mount :

yes

Terminal Form :

Gull wing

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Series :

TrenchMOS™

Vgs (Max) :

±20V

Published :

2017

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Drain-source On Resistance-Max :

0.0085Ohm

Pulsed Drain Current-Max (IDM) :

423A

Rds On (Max) @ Id, Vgs :

8m Ω @ 25A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

148 mJ

Drain to Source Voltage (Vdss) :

80V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

100A

Reference Standard :

IEC-60134

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

JEDEC-95 Code :

MO-235

Package / Case :

SC-100, SOT-669

Power Dissipation-Max :

238W Ta

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED