PSMN8R0-30YLC115
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- Mfr.Part #
- PSMN8R0-30YLC115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 4,470
- In Stock ：
- 4,470
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 1.95V @ 1mA
- Vgs (Max) :
- ±20V
- Package / Case :
- SC-100, SOT-669
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 42W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 848pF @ 15V
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 54A Tc
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 15A, 10V
- Datasheets
- PSMN8R0-30YLC115
N-Channel Tape & Reel (TR) 7.9m Ω @ 15A, 10V ±20V 848pF @ 15V 15nC @ 10V 30V SC-100, SOT-669
PSMN8R0-30YLC,115 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 848pF @ 15V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
PSMN8R0-30YLC,115 Features
a 30V drain to source voltage (Vdss)
PSMN8R0-30YLC,115 Applications
There are a lot of NXP USA Inc.
PSMN8R0-30YLC,115 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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