PSMN7R8-120PSQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Drain to Source Breakdown Voltage :

120V

Number of Elements :

1

Fall Time (Typ) :

60.8 ns

Continuous Drain Current (ID) :

70A

Rise Time :

55.3ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0079Ohm

Pulsed Drain Current-Max (IDM) :

280A

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

9473pF @ 60V

Published :

2013

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

151.8 ns

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Weight :

6.000006g

Max Dual Supply Voltage :

120V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 25A, 10V

Element Configuration :

Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

167nC @ 10V

Turn On Delay Time :

45.5 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation-Max :

349W Tc

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Mounting Type :

Through Hole