PSMN7R8-120ESQ

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 25A, 10V

Number of Terminations :

3

Packaging :

Tube

Published :

2013

Power Dissipation-Max :

349W Tc

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0079Ohm

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

70A

Drain to Source Voltage (Vdss) :

120V

Avalanche Energy Rating (Eas) :

386 mJ

Reference Standard :

IEC-60134

Transistor Element Material :

SILICON

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Surface Mount :

No

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

167nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

70A Tc

FET Type :

N-Channel

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

9473pF @ 60V

Pulsed Drain Current-Max (IDM) :

280A

DS Breakdown Voltage-Min :

120V