PSMN7R6-60XSQ
- Mfr.Part #
- PSMN7R6-60XSQ
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 51.5A TO220F
- Stock
- 26,249
- In Stock :
- 26,249
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 51.5A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2651pF @ 30V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs(th) (Max) @ Id :
- 4.6V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2014
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 38.7nC @ 10V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Power Dissipation-Max :
- 46W Tc
- Datasheets
- PSMN7R6-60XSQ

N-Channel Tube 7.8m Ω @ 25A, 10V ±20V 2651pF @ 30V 38.7nC @ 10V 60V TO-220-3 Full Pack, Isolated Tab
PSMN7R6-60XSQ Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2651pF @ 30V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
PSMN7R6-60XSQ Features
a 60V drain to source voltage (Vdss)
PSMN7R6-60XSQ Applications
There are a lot of NXP USA Inc.
PSMN7R6-60XSQ applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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