PSMN7R6-60PS,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

92A

Gate Charge (Qg) (Max) @ Vgs :

38.7nC @ 10V

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

13 ns

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Number of Terminations :

3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Element Configuration :

Single

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Surface Mount :

No

Published :

2010

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 25A, 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2651pF @ 30V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

19 ns

Rise Time :

21ns

Turn-Off Delay Time :

37 ns

Drain-source On Resistance-Max :

0.0078Ohm

Power Dissipation-Max :

149W Tc

Transistor Application :

SWITCHING

Case Connection :

DRAIN

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Max Dual Supply Voltage :

60V

Number of Pins :

3

Mounting Type :

Through Hole

Pin Count :

3

Power Dissipation :

149W