PSMN7R6-100BSEJ
- Mfr.Part #
- PSMN7R6-100BSEJ
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A D2PAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 100V
- Fall Time (Typ) :
- 47 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 75A
- Max Dual Supply Voltage :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 426 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 296W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 7110pF @ 50V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 7.6m Ω @ 25A, 10V
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 82 ns
- Published :
- 2012
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tj
- Drain-source On Resistance-Max :
- 0.0076Ohm
- Turn On Delay Time :
- 31 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 48ns
- Weight :
- 3.949996g
- Gate Charge (Qg) (Max) @ Vgs :
- 128nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Datasheets
- PSMN7R6-100BSEJ

N-Channel Tape & Reel (TR) 7.6m Ω @ 25A, 10V ±20V 7110pF @ 50V 128nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN7R6-100BSEJ Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 426 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7110pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 75A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 82 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 31 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (10V) reduces this device's overall power consumption.
PSMN7R6-100BSEJ Features
the avalanche energy rating (Eas) is 426 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 82 ns
PSMN7R6-100BSEJ Applications
There are a lot of Nexperia USA Inc.
PSMN7R6-100BSEJ applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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