PSMN7R6-100BSEJ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

31 ns

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

426 mJ

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Rds On (Max) @ Id, Vgs :

7.6m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

100V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Number of Terminations :

2

Rise Time :

48ns

Weight :

3.949996g

Input Capacitance (Ciss) (Max) @ Vds :

7110pF @ 50V

Transistor Application :

SWITCHING

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

47 ns

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

82 ns

Continuous Drain Current (ID) :

75A

Pin Count :

3

Power Dissipation-Max :

296W Tc

Current - Continuous Drain (Id) @ 25°C :

75A Tj

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Surface Mount :

yes

Transistor Element Material :

SILICON

Number of Elements :

1

Drain-source On Resistance-Max :

0.0076Ohm