PSMN7R6-100BSEJ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

47 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

75A

Max Dual Supply Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Avalanche Energy Rating (Eas) :

426 mJ

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

296W Tc

Input Capacitance (Ciss) (Max) @ Vds :

7110pF @ 50V

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

7.6m Ω @ 25A, 10V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Element Configuration :

Single

Number of Terminations :

2

Turn-Off Delay Time :

82 ns

Published :

2012

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

75A Tj

Drain-source On Resistance-Max :

0.0076Ohm

Turn On Delay Time :

31 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rise Time :

48ns

Weight :

3.949996g

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Pins :

3