PSMN7R5-60YLX
- Mfr.Part #
- PSMN7R5-60YLX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 86A LFPAK56
- Stock
- 21,529
- In Stock :
- 21,529
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 346A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Pin Count :
- 4
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- JEDEC-95 Code :
- MO-235
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 20A, 10V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- JESD-30 Code :
- R-PSSO-G4
- Input Capacitance (Ciss) (Max) @ Vds :
- 4570pF @ 25V
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 76.5 mJ
- Package / Case :
- SC-100, SOT-669
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.0087Ohm
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Published :
- 2015
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 147W Tc
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~175°C TJ
- Reference Standard :
- IEC-60134
- DS Breakdown Voltage-Min :
- 60V
- Continuous Drain Current (ID) :
- 86A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PSMN7R5-60YLX

N-Channel Tape & Reel (TR) 7.5m Ω @ 20A, 10V ±20V 4570pF @ 25V 31nC @ 5V 60V SC-100, SOT-669
PSMN7R5-60YLX Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 76.5 mJ.A device's maximal input capacitance is 4570pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 86A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 346A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
PSMN7R5-60YLX Features
the avalanche energy rating (Eas) is 76.5 mJ
a continuous drain current (ID) of 86A
based on its rated peak drain current 346A.
a 60V drain to source voltage (Vdss)
PSMN7R5-60YLX Applications
There are a lot of Nexperia USA Inc.
PSMN7R5-60YLX applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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