PSMN7R0-60YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Number of Pins :

4

Terminal Form :

Gull wing

Number of Terminations :

4

Terminal Position :

Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2712pF @ 30V

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

89A Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Power Dissipation-Max :

117W Tc

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

89A

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

356A

JESD-609 Code :

e3

Pin Count :

4

Package / Case :

SC-100, SOT-669

DS Breakdown Voltage-Min :

60V

JEDEC-95 Code :

MO-235