PSMN7R0-30MLC,115
- Mfr.Part #
- PSMN7R0-30MLC,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 67A LFPAK33
- Stock
- 9,669
- In Stock :
- 9,669
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 67A
- Drain-source On Resistance-Max :
- 0.009Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 17.9nC @ 10V
- Power Dissipation-Max :
- 57W Tc
- Drain to Source Breakdown Voltage :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1076pF @ 15V
- JESD-30 Code :
- R-PSSO-G4
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 15A, 10V
- Turn On Delay Time :
- 9.7 ns
- Factory Lead Time :
- 26 Weeks
- Pin Count :
- 8
- Power Dissipation :
- 57W
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 13.4 ns
- Package / Case :
- SOT-1210, 8-LFPAK33
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 30V
- Reference Standard :
- IEC-60134
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Published :
- 2012
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Rise Time :
- 15.4ns
- Gate to Source Voltage (Vgs) :
- 2.15V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 8.5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 270A
- Mounting Type :
- Surface Mount
- Datasheets
- PSMN7R0-30MLC,115

N-Channel Tape & Reel (TR) 7m Ω @ 15A, 10V ±20V 1076pF @ 15V 17.9nC @ 10V SOT-1210, 8-LFPAK33
PSMN7R0-30MLC,115 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1076pF @ 15V.This device has a continuous drain current (ID) of [67A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 13.4 ns.A maximum pulsed drain current of 270A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 2.15V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
PSMN7R0-30MLC,115 Features
a continuous drain current (ID) of 67A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13.4 ns
based on its rated peak drain current 270A.
PSMN7R0-30MLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN7R0-30MLC,115 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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