PSMN7R0-100PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

475A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Radiation Hardening :

No

Rise Time :

45.6ns

Power Dissipation-Max :

269W Tc

Vgs (Max) :

±20V

Packaging :

Tube

Number of Elements :

1

JESD-609 Code :

e3

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

12m Ω @ 15A, 10V

Continuous Drain Current (ID) :

100A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

103.9 ns

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pin Count :

3

Drain-source On Resistance-Max :

0.0068Ohm

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Drain to Source Breakdown Voltage :

100V

Max Dual Supply Voltage :

100V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Number of Terminations :

3

Power Dissipation :

269W

Published :

2013

Turn On Delay Time :

34.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

6686pF @ 50V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Element Configuration :

Single

Min Operating Temperature :

-55°C

Fall Time (Typ) :

49.5 ns

Gate to Source Voltage (Vgs) :

20V