PSMN7R0-100ES,127
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- Mfr.Part #
- PSMN7R0-100ES,127
- Manufacturer
- Nexperia
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A I2PAK
- Stock
- 48,531
- In Stock ：
- 48,531
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 49.5 ns
- Published :
- 2010
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6686pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- Continuous Drain Current (ID) :
- 100A
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Rise Time :
- 45.6ns
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 103.9 ns
- Pin Count :
- 3
- Element Configuration :
- Single
- Turn On Delay Time :
- 34.6 ns
- Power Dissipation :
- 269W
- Packaging :
- Tube
- Factory Lead Time :
- 20 Weeks
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drain to Source Breakdown Voltage :
- 90V
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 15A, 10V
- Power Dissipation-Max :
- 269W Tc
- Max Dual Supply Voltage :
- 100V
- Datasheets
- PSMN7R0-100ES,127
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N-Channel Tube 6.8m Ω @ 15A, 10V ±20V 6686pF @ 50V 125nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
PSMN7R0-100ES,127 Overview
The maximum input capacitance of this device is 6686pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.When VGS=90V, and ID flows to VDS at 90VVDS, the drain-source breakdown voltage is 90V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 103.9 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 34.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 100V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
PSMN7R0-100ES,127 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 103.9 ns
PSMN7R0-100ES,127 Applications
There are a lot of Nexperia USA Inc.
PSMN7R0-100ES,127 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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