PSMN7R0-100BS,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Case Connection :

DRAIN

Turn-Off Delay Time :

103.9 ns

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Rise Time :

45.6ns

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0068Ohm

Published :

2012

Gate to Source Voltage (Vgs) :

4.3V

Turn On Delay Time :

34.6 ns

Transistor Application :

SWITCHING

Power Dissipation :

269W

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Breakdown Voltage :

90V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Max Dual Supply Voltage :

100V

FET Type :

N-Channel

Continuous Drain Current (ID) :

100A

Fall Time (Typ) :

49.5 ns

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 15A, 10V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

475A

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Power Dissipation-Max :

269W Tc

Input Capacitance (Ciss) (Max) @ Vds :

6686pF @ 50V