PSMN6R5-80PS,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Number of Terminations :

3

Pin Count :

3

Turn-Off Delay Time :

57 ns

Pulsed Drain Current-Max (IDM) :

470A

Fall Time (Typ) :

22 ns

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

FET Type :

N-Channel

Turn On Delay Time :

26 ns

Drain-source On Resistance-Max :

0.0069Ohm

Transistor Element Material :

SILICON

Power Dissipation-Max :

210W Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 1mA

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

100A

Packaging :

Tube

Mounting Type :

Through Hole

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4461pF @ 40V

Drain to Source Breakdown Voltage :

80V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Pins :

3

Avalanche Energy Rating (Eas) :

700 mJ

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Rise Time :

24ns

Rds On (Max) @ Id, Vgs :

6.9m Ω @ 15A, 10V

Case Connection :

DRAIN

Package / Case :

TO-220-3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

80V

Power Dissipation :

210W

Factory Lead Time :

12 Weeks