PSMN6R5-25YLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

18 mJ

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

1093pF @ 12V

Power Dissipation-Max :

48W Tc

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 20A, 10V

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Additional Feature :

High Reliability

Surface Mount :

yes

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

JEDEC-95 Code :

MO-235

DS Breakdown Voltage-Min :

25V

Drain-source On Resistance-Max :

0.0085Ohm

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Drain to Source Voltage (Vdss) :

25V

Package / Case :

SC-100, SOT-669

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

64A

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G4

Transistor Element Material :

SILICON

Number of Terminations :

4

Terminal Position :

Single

Published :

2011

Number of Elements :

1

Reference Standard :

IEC-60134

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

256A

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)