PSMN6R3-120PS

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

42.1 ns

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

67.7 ns

Pulsed Drain Current-Max (IDM) :

280A

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

207.1nC @ 10V

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

142.1 ns

Input Capacitance (Ciss) (Max) @ Vds :

11384pF @ 60V

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

3

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.0067Ohm

Published :

2013

Terminal Position :

Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

58.2ns

JESD-609 Code :

e3

Threshold Voltage :

3V

Number of Elements :

1

Continuous Drain Current (ID) :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Case Connection :

DRAIN

Power Dissipation-Max :

405W Tc

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Max Dual Supply Voltage :

120V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

120V

Power Dissipation :

405W

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

TO-220AB