PSMN6R0-30YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.00835Ohm

Operating Temperature :

-55°C~175°C TJ

Package / Case :

SC-100, SOT-669

Input Capacitance (Ciss) (Max) @ Vds :

832pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6m Ω @ 15A, 10V

Number of Pins :

4

FET Type :

N-Channel

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

263A

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Turn-Off Delay Time :

10.5 ns

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

13.7nC @ 10V

Radiation Hardening :

No

Case Connection :

DRAIN

Number of Elements :

1

Surface Mount :

yes

JEDEC-95 Code :

MO-235

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Dual Supply Voltage :

30V

Continuous Drain Current (ID) :

66A

Base Part Number :

PSMN6R0

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

10.9 ns

Turn On Delay Time :

9 ns

Pin Count :

4

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

47W Tc

Rise Time :

16.2ns