PSMN6R0-30YLB,115

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Mfr.Part #
PSMN6R0-30YLB,115
Manufacturer
NXP Semiconductors
Package / Case
SC-100, SOT-669
Datasheet
Download
Description
NEXPERIA PSMN6R0-25YLD - 61A, 25
Stock
1,322
In Stock :
1,322

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
283A
Radiation Hardening :
No
Turn-Off Delay Time :
29 ns
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Package / Case :
SC-100, SOT-669
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 20A, 10V
Drain Current-Max (Abs) (ID) :
71A
Additional Feature :
High Reliability
Number of Elements :
1
Power Dissipation-Max :
58W Tc
Turn On Delay Time :
16 ns
Number of Terminations :
4
Input Capacitance (Ciss) (Max) @ Vds :
1088pF @ 15V
Rise Time :
15ns
Vgs (Max) :
±20V
Pin Count :
4
Max Dual Supply Voltage :
30V
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
1.95V @ 1mA
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
71A Tc
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
4
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Published :
2011
Drain-source On Resistance-Max :
0.0081Ohm
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
12 Weeks
JEDEC-95 Code :
MO-235
Mount :
Surface Mount
Continuous Drain Current (ID) :
90mA
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Case Connection :
DRAIN
FET Type :
N-Channel
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
13 mJ
Mounting Type :
Surface Mount
Fall Time (Typ) :
9 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
PSMN6R0-30YLB,115
Introducing Transistors - FETs, MOSFETs - Single NXP Semiconductors PSMN6R0-30YLB,115 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-100, SOT-669, Number of Terminations:4, Operating Temperature:-55°C~175°C TJ, Number of Pins:4, Mounting Type:Surface Mount, PSMN6R0-30YLB,115 pinout, PSMN6R0-30YLB,115 datasheet PDF, PSMN6R0-30YLB,115 amp .Beyond Transistors - FETs, MOSFETs - Single NXP Semiconductors PSMN6R0-30YLB,115 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PSMN6R0-30YLB,115


N-Channel Tape & Reel (TR) 6.5m Ω @ 20A, 10V ±20V 1088pF @ 15V 19nC @ 10V SC-100, SOT-669

PSMN6R0-30YLB,115 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 13 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1088pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 90mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 71A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 283A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 16 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 30V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

PSMN6R0-30YLB,115 Features


the avalanche energy rating (Eas) is 13 mJ
a continuous drain current (ID) of 90mA
the turn-off delay time is 29 ns
based on its rated peak drain current 283A.


PSMN6R0-30YLB,115 Applications


There are a lot of Nexperia USA Inc.
PSMN6R0-30YLB,115 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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