PSMN6R0-30YLB,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

58W Tc

Turn-Off Delay Time :

29 ns

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Transistor Element Material :

SILICON

Turn On Delay Time :

16 ns

Max Dual Supply Voltage :

30V

Mount :

Surface Mount

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

71A

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

13 mJ

Rise Time :

15ns

Drain-source On Resistance-Max :

0.0081Ohm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Case Connection :

DRAIN

Pin Count :

4

Number of Elements :

1

Package / Case :

SC-100, SOT-669

Factory Lead Time :

12 Weeks

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

283A

Continuous Drain Current (ID) :

90mA

Additional Feature :

High Reliability

Fall Time (Typ) :

9 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1088pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

71A Tc

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 20A, 10V

JEDEC-95 Code :

MO-235

Vgs(th) (Max) @ Id :

1.95V @ 1mA

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Number of Pins :

4