PSMN6R0-30YLB,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

283A

Radiation Hardening :

No

Turn-Off Delay Time :

29 ns

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Package / Case :

SC-100, SOT-669

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 20A, 10V

Drain Current-Max (Abs) (ID) :

71A

Additional Feature :

High Reliability

Number of Elements :

1

Power Dissipation-Max :

58W Tc

Turn On Delay Time :

16 ns

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

1088pF @ 15V

Rise Time :

15ns

Vgs (Max) :

±20V

Pin Count :

4

Max Dual Supply Voltage :

30V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

71A Tc

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

4

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Drain-source On Resistance-Max :

0.0081Ohm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

MO-235

Mount :

Surface Mount

Continuous Drain Current (ID) :

90mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

FET Type :

N-Channel

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

13 mJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

9 ns

Configuration :

SINGLE WITH BUILT-IN DIODE