PSMN5R8-40YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Radiation Hardening :

No

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0057Ohm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1703pF @ 20V

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Drain to Source Breakdown Voltage :

40V

Rise Time :

12ns

Number of Pins :

4

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

360A

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Package / Case :

SC-100, SOT-669

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

8 ns

JEDEC-95 Code :

MO-235

Surface Mount :

yes

Power Dissipation :

89W

Number of Elements :

1

Continuous Drain Current (ID) :

90A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

28.8nC @ 10V

Element Configuration :

Single

Power Dissipation-Max :

89W Tc

Turn-Off Delay Time :

25 ns

Avalanche Energy Rating (Eas) :

65 mJ

Max Dual Supply Voltage :

40V

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

16 ns

Published :

2010