PSMN5R6-100PS,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

141nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

8061pF @ 50V

Published :

2012

Rise Time :

46ns

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Width :

6.35mm

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

100A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

306W

Avalanche Energy Rating (Eas) :

468 mJ

Turn On Delay Time :

31 ns

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

100V

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Vgs (Max) :

±20V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

3

Power Dissipation-Max :

306W Tc

Fall Time (Typ) :

34 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0056Ohm

FET Type :

N-Channel

Surface Mount :

No

Number of Elements :

1

Weight :

4.535924g

Factory Lead Time :

12 Weeks

Length :

6.35mm

Drain to Source Breakdown Voltage :

100V

Height :

6.35mm

Case Connection :

DRAIN

Packaging :

Tube

Turn-Off Delay Time :

83 ns

Element Configuration :

Single

Number of Pins :

3