PSMN5R4-25YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 10V

Rds On (Max) @ Id, Vgs :

5.69m Ω @ 15A, 10V

Terminal Position :

Single

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PSSO-G4

Pin Count :

4

Power Dissipation-Max :

47W Tc

Factory Lead Time :

12 Weeks

Additional Feature :

High Reliability

FET Feature :

Schottky Diode (Body)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

25V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

75.8 mJ

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.00569Ohm

Pulsed Drain Current-Max (IDM) :

280A

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

25V

JEDEC-95 Code :

MO-235

Continuous Drain Current (ID) :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Reference Standard :

IEC-60134

Input Capacitance (Ciss) (Max) @ Vds :

858pF @ 12V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Package / Case :

SC-100, SOT-669

RoHS Status :

ROHS3 Compliant