PSMN5R3-25MLDX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

285A

Vgs(th) (Max) @ Id :

2.2V @ 1mA

FET Type :

N-Channel

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

12.7nC @ 10V

Pin Count :

8

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Published :

2016

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Position :

Single

Power Dissipation-Max :

51W Tc

DS Breakdown Voltage-Min :

25V

Avalanche Energy Rating (Eas) :

76.7 mJ

Case Connection :

DRAIN

Reference Standard :

IEC-60134

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 15A, 10V

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

70A

FET Feature :

Schottky Diode (Body)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G4

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Package / Case :

SOT-1210, 8-LFPAK33

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.00849Ohm

Input Capacitance (Ciss) (Max) @ Vds :

858pF @ 12V

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount