PSMN5R0-30YL,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Terminations :

4

Power Dissipation-Max :

61W Tc

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5m Ω @ 15A, 10V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

91A Tc

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

336A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Package / Case :

SC-100, SOT-669

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

JEDEC-95 Code :

MO-235

Pin Count :

4

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

32 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Terminal Position :

Single

Published :

2008

Drain-source On Resistance-Max :

0.008Ohm

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

FET Type :

N-Channel

Continuous Drain Current (ID) :

91A

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

4

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 12V