PSMN5R0-100PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

338W Tc

Drain to Source Breakdown Voltage :

100V

Rise Time :

91ns

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Lead Free :

Lead Free

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Pin Count :

3

Mounting Type :

Through Hole

Max Dual Supply Voltage :

100V

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Power Dissipation :

338W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

9900pF @ 50V

Fall Time (Typ) :

63 ns

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

JESD-609 Code :

e3

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Published :

2011

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain-source On Resistance-Max :

0.005ohm

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

122 ns

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

3

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

120A

Turn On Delay Time :

45 ns

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Number of Pins :

3

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

680A

Number of Elements :

1