PSMN4R8-100BSEJ
- Mfr.Part #
- PSMN4R8-100BSEJ
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 120A D2PAK
- Stock
- 43,682
- In Stock :
- 43,682
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 707A
- Turn Off Time-Max (toff) :
- 294ns
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 4.8m Ω @ 25A, 10V
- Pin Count :
- 3
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Published :
- 2013
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 405W Tc
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Wire Gauge (Max) :
- 24 AWG
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.0048Ohm
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 127 ns
- Power Dissipation :
- 405W
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tj
- Weight :
- 3.949996g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Wire Gauge (Min) :
- 20 AWG
- Rise Time :
- 65ns
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 707A
- Reach Compliance Code :
- not_compliant
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 69 ns
- Material :
- Brass, Bronze
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 542 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Wire/Cable Gauge :
- 18 AWG
- Gate Charge (Qg) (Max) @ Vgs :
- 278nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 14400pF @ 50V
- Surface Mount :
- yes
- Max Dual Supply Voltage :
- 100V
- Continuous Drain Current (ID) :
- 120A
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Number of Elements :
- 1
- Termination :
- Wire Wrap
- Plating :
- Gold, Lead, Tin
- Turn On Delay Time :
- 41 ns
- Datasheets
- PSMN4R8-100BSEJ

N-Channel Tape & Reel (TR) 4.8m Ω @ 25A, 10V ±20V 14400pF @ 50V 278nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN4R8-100BSEJ Description
The PSMN4R8-100BSE is a N-channel standard level MOSFET offers very low RDS (ON) for low conduction losses. The device complements the latest hot-swap controllers - robust enough to withstand substantial inrush currents during turn ON, whilst offering a low RDS (ON) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48V backplane/supply rail.
PSMN4R8-100BSEJ Features
-
-55 to 175°C Junction temperature range
-
Enhanced forward biased safe operating area for superior linear mode operation
PSMN4R8-100BSEJ Applications
-
Industrial
-
Power Management
-
Communications & Networking
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