PSMN4R6-60BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

266 mJ

Drain to Source Breakdown Voltage :

60V

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Continuous Drain Current (ID) :

100A

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

60V

Turn On Delay Time :

26 ns

Transistor Application :

SWITCHING

Power Dissipation :

211W

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

565A

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Power Dissipation-Max :

211W Tc

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

22 ns

Turn-Off Delay Time :

58 ns

Transistor Element Material :

SILICON

Rise Time :

24ns

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

70.8nC @ 10V

FET Type :

N-Channel

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4426pF @ 30V

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Radiation Hardening :

No

Number of Elements :

1

Published :

2012

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 25A, 10V

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0044Ohm