PSMN4R5-40BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

40V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Rise Time :

23ns

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

152 mJ

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

42.3nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

30 ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2683pF @ 20V

Number of Pins :

3

Turn On Delay Time :

19 ns

RoHS Status :

ROHS3 Compliant

Published :

2011

Pulsed Drain Current-Max (IDM) :

545A

Number of Terminations :

2

Fall Time (Typ) :

9 ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0045ohm

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Power Dissipation-Max :

148W Tc

Element Configuration :

Single

Continuous Drain Current (ID) :

100A

Surface Mount :

yes

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tape and Reel (TR)