PSMN4R5-30YLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1324pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Vgs (Max) :

±20V

Threshold Voltage :

1.54V

Pulsed Drain Current-Max (IDM) :

336A

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Published :

2011

Terminal Position :

Single

Number of Pins :

5

Number of Elements :

1

JESD-609 Code :

e3

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Rise Time :

18.7ns

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Pin Count :

4

Fall Time (Typ) :

8.75 ns

Power Dissipation-Max :

61W Tc

JESD-30 Code :

R-PSSO-G4

Continuous Drain Current (ID) :

84A

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

61W

FET Type :

N-Channel

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Turn On Delay Time :

17.2 ns

Package / Case :

SC-100, SOT-669

Terminal Form :

Gull wing

Mount :

Surface Mount

Turn-Off Delay Time :

24.3 ns

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Case Connection :

DRAIN

Additional Feature :

High Reliability