PSMN4R4-80BS,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0045ohm

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 1mA

Max Dual Supply Voltage :

80V

Transistor Application :

SWITCHING

Power Dissipation-Max :

306W Tc

Drain to Source Breakdown Voltage :

80V

Terminal Form :

Gull wing

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

680A

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

66 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Rise Time :

38.1ns

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Turn On Delay Time :

34.7 ns

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

100A

Fall Time (Typ) :

18.4 ns

Vgs (Max) :

±20V

Power Dissipation :

306W

Number of Elements :

1

FET Type :

N-Channel

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 40V