PSMN4R4-30MLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Turn On Delay Time :

12.6 ns

Gate to Source Voltage (Vgs) :

2.15V

Power Dissipation :

69W

Fall Time (Typ) :

11.2 ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

16 ns

Pin Count :

8

Drain-source On Resistance-Max :

0.006Ohm

Max Dual Supply Voltage :

30V

Power Dissipation-Max :

69W Tc

Contact Plating :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Rise Time :

23.2ns

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

363A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

IEC-60134

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Terminal Form :

Gull wing

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Rds On (Max) @ Id, Vgs :

4.65m Ω @ 25A, 10V

JESD-30 Code :

R-PSSO-G4

RoHS Status :

ROHS3 Compliant

Published :

2012

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Elements :

1

Number of Terminations :

4

Package / Case :

SOT-1210, 8-LFPAK33

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

70A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1515pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Drain to Source Breakdown Voltage :

30V

Surface Mount :

yes