PSMN4R4-30MLC,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

4.65m Ω @ 25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1515pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Number of Pins :

8

Turn On Delay Time :

12.6 ns

Published :

2012

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.006Ohm

Pin Count :

8

Power Dissipation-Max :

69W Tc

Transistor Element Material :

SILICON

Surface Mount :

yes

Number of Elements :

1

Package / Case :

SOT-1210, 8-LFPAK33

Reference Standard :

IEC-60134

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Turn-Off Delay Time :

16 ns

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Power Dissipation :

69W

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

2.15V

Max Dual Supply Voltage :

30V

Rise Time :

23.2ns

Fall Time (Typ) :

11.2 ns

Continuous Drain Current (ID) :

70A

Factory Lead Time :

26 Weeks

Contact Plating :

Tin

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

363A