PSMN4R4-30MLC,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

30V

Rds On (Max) @ Id, Vgs :

4.65m Ω @ 25A, 10V

JESD-609 Code :

e3

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G4

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Rise Time :

23.2ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

11.2 ns

FET Type :

N-Channel

Number of Pins :

8

Factory Lead Time :

26 Weeks

Turn On Delay Time :

12.6 ns

Transistor Application :

SWITCHING

Published :

2012

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Power Dissipation-Max :

69W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Continuous Drain Current (ID) :

70A

Case Connection :

DRAIN

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Turn-Off Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

1515pF @ 15V

Power Dissipation :

69W

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Package / Case :

SOT-1210, 8-LFPAK33

Reference Standard :

IEC-60134

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

363A

Gate to Source Voltage (Vgs) :

2.15V

Contact Plating :

Tin

Drain-source On Resistance-Max :

0.006Ohm

Drain to Source Breakdown Voltage :

30V