PSMN4R3-30PL,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Continuous Drain Current (ID) :

100A

JEDEC-95 Code :

TO-220AB

Height :

6.35mm

Gate Charge (Qg) (Max) @ Vgs :

41.5nC @ 10V

Max Dual Supply Voltage :

30V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 15A, 10V

Surface Mount :

No

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 12V

Terminal Position :

Single

Power Dissipation :

103W

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

103W Tc

Weight :

453.59237mg

Pulsed Drain Current-Max (IDM) :

465A

Vgs (Max) :

±20V

Width :

6.35mm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

74 mJ

Drain to Source Breakdown Voltage :

30V

Length :

31.75mm

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.0062Ohm

Turn-Off Delay Time :

44 ns

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Rise Time :

58ns

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Number of Terminations :

3

Lead Free :

Lead Free

Fall Time (Typ) :

21 ns

Radiation Hardening :

No

Turn On Delay Time :

28 ns

Pin Count :

3

Published :

2009

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2.15V @ 1mA

FET Type :

N-Channel