PSMN4R3-100ES,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

91ns

FET Type :

N-Channel

Mounting Type :

Through Hole

Published :

2011

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Fall Time (Typ) :

63 ns

Turn On Delay Time :

45 ns

Number of Elements :

1

Power Dissipation-Max :

338W Tc

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

No

Turn-Off Delay Time :

122 ns

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

9900pF @ 50V

Continuous Drain Current (ID) :

120A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

JESD-609 Code :

e3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Max Dual Supply Voltage :

100V

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 25A, 10V

Element Configuration :

Single

Number of Pins :

3

Pin Count :

3

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Power Dissipation :

338W

Transistor Element Material :

SILICON

Number of Terminations :

3