PSMN4R2-60PLQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

8533pF @ 25V

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

130A

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Vgs (Max) :

±20V

Power Dissipation :

263W

Max Dual Supply Voltage :

60V

Packaging :

Tube

Published :

2013

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

72 ns

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

701A

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

84 ns

Number of Terminations :

3

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 25A, 10V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Rise Time :

97ns

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

FET Type :

N-Channel

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Package / Case :

TO-220-3

Power Dissipation-Max :

263W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V