PSMN4R2-30MLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

26 Weeks

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Published :

2015

Turn On Delay Time :

10.1 ns

Radiation Hardening :

No

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

366A

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

70A

Gate to Source Voltage (Vgs) :

2.2V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1795pF @ 15V

Vgs (Max) :

±20V

Power Dissipation-Max :

65W Tc

Package / Case :

SOT-1210, 8-LFPAK33

Rise Time :

18.5ns

Pin Count :

8

Avalanche Energy Rating (Eas) :

59 mJ

Transistor Application :

SWITCHING

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

29.3nC @ 10V

Drain-source On Resistance-Max :

0.0057Ohm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Terminations :

4

Fall Time (Typ) :

8.7 ns

Mounting Type :

Surface Mount

Terminal Position :

Single

Turn-Off Delay Time :

12 ns

JESD-30 Code :

R-PSSO-G4

FET Feature :

Schottky Diode (Body)

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Operating Temperature :

-55°C~175°C TJ