PSMN4R1-30YLC,115
- Mfr.Part #
- PSMN4R1-30YLC,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 92A LFPAK56
- Stock
- 6,764
- In Stock :
- 6,764
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1.95V @ 1mA
- Continuous Drain Current (ID) :
- 92A
- Turn On Delay Time :
- 16 ns
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Rise Time :
- 19ns
- Number of Pins :
- 4
- Turn-Off Delay Time :
- 24 ns
- Max Dual Supply Voltage :
- 30V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Package / Case :
- SC-100, SOT-669
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- High Reliability
- Power Dissipation :
- 64W
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 90A
- Max Operating Temperature :
- 175°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1502pF @ 15V
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 4
- Pulsed Drain Current-Max (IDM) :
- 360A
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 67W Tc
- Published :
- 2011
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 4.35m Ω @ 20A, 10V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 92A Tc
- Fall Time (Typ) :
- 10 ns
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- JEDEC-95 Code :
- MO-235
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Datasheets
- PSMN4R1-30YLC,115

N-Channel Tape & Reel (TR) 4.35m Ω @ 20A, 10V ±20V 1502pF @ 15V 23nC @ 10V SC-100, SOT-669
PSMN4R1-30YLC,115 Overview
The maximum input capacitance of this device is 1502pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 92A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 90A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 24 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 360A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
PSMN4R1-30YLC,115 Features
a continuous drain current (ID) of 92A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 360A.
PSMN4R1-30YLC,115 Applications
There are a lot of Nexperia USA Inc.
PSMN4R1-30YLC,115 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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