PSMN4R0-40YS,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 15A, 10V

Factory Lead Time :

12 Weeks

Rise Time :

19ns

Avalanche Energy Rating (Eas) :

77 mJ

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

106W Tc

Turn-Off Delay Time :

34 ns

JESD-609 Code :

e3

Width :

6.35mm

Fall Time (Typ) :

12 ns

Pin Count :

4

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

18 ns

Max Dual Supply Voltage :

40V

Power Dissipation :

106W

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

JEDEC-95 Code :

MO-235

Number of Pins :

4

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

DRAIN

Height :

6.35mm

FET Type :

N-Channel

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Resistance :

5.6MOhm

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Package / Case :

SC-100, SOT-669

Length :

6.35mm

Surface Mount :

yes

Number of Terminations :

4

Packaging :

Digi-Reel®

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Weight :

453.59237mg

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ