PSMN4R0-30YLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

30V

Pulsed Drain Current-Max (IDM) :

378A

Vgs(th) (Max) @ Id :

2.2V @ 1mA

JEDEC-95 Code :

MO-235

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Number of Channels :

1

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

11.7 ns

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

95A

FET Type :

N-Channel

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

63 mJ

Gate Charge (Qg) (Max) @ Vgs :

19.4nC @ 10V

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Rise Time :

21.2ns

Pin Count :

4

Package / Case :

SC-100, SOT-669

Power Dissipation-Max :

64W Tc

Number of Elements :

1

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Surface Mount :

yes

Number of Pins :

4

Turn On Delay Time :

10.7 ns

Radiation Hardening :

No

Turn-Off Delay Time :

14.9 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1272pF @ 15V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Published :

2013

Number of Terminations :

4

Drain to Source Breakdown Voltage :

30V

Drain-source On Resistance-Max :

0.0055Ohm