PSMN4R0-30YL,115
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- Mfr.Part #
- PSMN4R0-30YL,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 100A LFPAK56
- Stock
- 9,287
- In Stock ：
- 9,287
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 36.6nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2090pF @ 12V
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 396A
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 5
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 41 mJ
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 69W Tc
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Factory Lead Time :
- 12 Weeks
- Pin Count :
- 4
- Turn-Off Delay Time :
- 44 ns
- Package / Case :
- SC-100, SOT-669
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 18 ns
- Rise Time :
- 51ns
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 99A
- ECCN Code :
- EAR99
- Published :
- 2014
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 15A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 100A
- Power Dissipation :
- 69W
- Turn On Delay Time :
- 28 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G4
- Contact Plating :
- Tin
- Datasheets
- PSMN4R0-30YL,115
N-Channel Tape & Reel (TR) 4m Ω @ 15A, 10V ±20V 2090pF @ 12V 36.6nC @ 10V SC-100, SOT-669
PSMN4R0-30YL,115 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 41 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2090pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 99A.As a result of its turn-off delay time, which is 44 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 396A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 28 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
PSMN4R0-30YL,115 Features
the avalanche energy rating (Eas) is 41 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 396A.
PSMN4R0-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN4R0-30YL,115 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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